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RJK03N4DPA - 30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET High Speed Power Switching

RJK03N4DPA_8215669.PDF Datasheet


 Full text search : 30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET High Speed Power Switching


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RJK03N5DPA 30V, 45A, 2.9m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
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RJK03N1DPA 30V, 45A, 3.0m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
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FAN1086D-2.85 FAN1086S-3.3 FAN1086S-2.5 FAN1086M-2 Neuron ICs; Max. Input Clock: 20 MHz; EEPROM: 2 KB; RAM: 2 KB; ROM: 16 KB; Package: 32 pin SOP; External Memory I/F: No
; Sensitivity dBµmV: 93 ~ 107; Package: SSOP16; Production Status: MP
FETs Nch 30VFETs Nch 30VPhase Lock Loop; Dual or Single: Single; Features: Integer - N; Power Supply V: 2.4 ~ 3.5; ImA: 4.8; Input FMHz: 700 ~ 1800; Operating Freq-MHz: 5 ~ 25; Sensitivity dBµmV: 92 ~ 107; Package: SSOP10; Production Status: MP
FETs Nch 30VFETs Nch 30VFETs Nch 30VMOSFETs - Nch VDSS=30V; Surface Mount Type: Y; Package: TSSOP-8; Number Of Pins: 8; R DS On (Ω): (max 0.018) (max 0.013) (max 0.012); I_S (A): (max 6)
FETs Nch 30VFETs Nch 30VFETs Nch 30VFETs Nch 30VTHREE-TERMINAL POSITIVE FIXED VOLTAGE REGULATORS
积极的固定电压稳压器
FETs Nch 30V<VDSS=60V; ; Package: TO-3P(N); R DS On (O): (max 0.055) (max 0.03); I_S (A): (max 45)
FETs Nch 30V<VDSS=60V; Surface Mount Type: N; Package: TO-220NIS; R DS On (O): (max 0.025) (max 0.017); I_S (A): (max 45)

STB45NF3LL STP45NF3LL STP45NF3LLFP STB45NF3LLT4 45 A, 30 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET
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N-CHANNEL 30V 0.014 OHM 45A TO-220/TO-220FP/D2PAK STRIPFET II POWER MOSFET
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
RJK03N2DPA 30V, 40A, 4.0m max Built in SBD N Channel Power MOS FET High Speed Power Switching
Renesas Electronics Corporation
RFP45N03L RF1S45N03LSM RF1S45N03L 45A 30V 0.022 Ohm Logic Level N-Channel Power MOSFETs
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45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs 45 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
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INTERSIL[Intersil Corporation]
Intersil, Corp.
IRF3707 IRF3707L IRF3707S IRF3707PBF IRF3707STRL I 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V Rds(on)max=12.5mohm Id=62A)
Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=62A)
Power MOSFET(Vdss=30V/ Rds(on)max=12.5mohm/ Id=62A)
IRF[International Rectifier]
IRF7831PBF IRF7831TRPBF IRF7831PBF-15 Ultra-Low Gate Impedance
HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 3.6mΩ@VGS = 10V , Qg(typ.) = 40nC )
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International Rectifier
STDD15 STDD15-04W STDD15-05W STDD15-07S STDD15-07S LOW CAPACTITANCE DETECTION DIODE
LOW CAPACTITANCE DETECTION DIODE
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PTC 1.60A 30V RESETTABLE 30R SER
Resettable Fuse; Series:30R; Thermistor Type:PTC; Operating Voltage Max:30V; Holding Current:0.9A; Tripping Current:1.8A; Length:12.2mm; Lead Pitch:5.1mm; Initial Resistance Min:0.07ohm; Initial Resistance Max:0.22ohm RoHS Compliant: NA
FUSE,1.85A, 30V, RESET,0.40"WX0.62"H 0.20"LS,TH,0.03 OHMS
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ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
DTB723YM DTB723YE -200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
ROHM[Rohm]
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ROHM[Rohm]
Q67040-S4469 IDB45E60 IDP45E60 Q67040-S4375 Silicon Power Diodes - 45A EmCon in TO220-2
Silicon Power Diodes - 45A EmCon in TO263
Fast Switching EmCon Diode 快速开关快恢复二极
From old datasheet system
INFINEON[Infineon Technologies AG]
 
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